IRF530SPBF
Manufacturer
SILICONIX
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 100V 14A TO263
MOSFET N-CH 100V 14A TO263
Detailed specification
Detailed specification
N-Channel 100 V 14A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount TO-263 (D2PAK)
N-Channel 100 V 14A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount TO-263 (D2PAK)
Description
Description
The IRF530SPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 14A. It features a low on-state resistance (RDS(on)) of 0.16Ω at VGS of 10V, making it suitable for high current applications. The device is housed in a TO-263 package, capable of dissipating up to 88W at Tc. It operates efficiently at temperatures up to 175°C and supports fast switching capabilities.
The IRF530SPBF is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 14A. It features a low on-state resistance (RDS(on)) of 0.16Ω at VGS of 10V, making it suitable for high current applications. The device is housed in a TO-263 package, capable of dissipating up to 88W at Tc. It operates efficiently at temperatures up to 175°C and supports fast switching capabilities.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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