HN1C03FU-B(TE85L,F
Tillverkare
TOSHIBA
Detaljerad specifikation
Detaljerad specifikation
Bipolära transistorer - BJT Dual Trans NPN x 2 20V, 0.3A, US6
Bipolära transistorer - BJT Dual Trans NPN x 2 20V, 0.3A, US6
Beskrivning (eng)
Beskrivning (eng)
The HN1C03FU-B is a dual NPN bipolar transistor designed for muting and switching applications. It features a collector-emitter voltage of 20V, a collector current of 300mA, and a low on-state resistance (RON) of 1Ω. The device is housed in a US6 package, providing high emitter-base voltage (VEBO = 25V) and a typical reverse hFE of 150, making it suitable for various electronic circuits.
The HN1C03FU-B is a dual NPN bipolar transistor designed for muting and switching applications. It features a collector-emitter voltage of 20V, a collector current of 300mA, and a low on-state resistance (RON) of 1Ω. The device is housed in a US6 package, providing high emitter-base voltage (VEBO = 25V) and a typical reverse hFE of 150, making it suitable for various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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