HN1C03FU-B(TE85L,F
Tillverkare
TOSHIBA
Detaljerad specifikation
Detaljerad specifikation
Bipolära transistorer - BJT Dual Trans NPN x 2 20V, 0.3A, US6
Bipolära transistorer - BJT Dual Trans NPN x 2 20V, 0.3A, US6
Beskrivning (eng)
Beskrivning (eng)
The HN1C03FU-B is a dual NPN bipolar transistor designed for muting and switching applications. It features a collector-emitter voltage of 20V, a collector current of 300mA, and a low on-state resistance (RON) of 1Ω. The device is housed in a US6 package, providing high emitter-base voltage (VEBO = 25V) and a typical reverse hFE of 150, making it suitable for various electronic circuits.
The HN1C03FU-B is a dual NPN bipolar transistor designed for muting and switching applications. It features a collector-emitter voltage of 20V, a collector current of 300mA, and a low on-state resistance (RON) of 1Ω. The device is housed in a US6 package, providing high emitter-base voltage (VEBO = 25V) and a typical reverse hFE of 150, making it suitable for various electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Kontakta säljare
Kontakta Marcus eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K