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Manufacturers

HN1C03FU-B(TE85L,F

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
HN1C03FU-B is utilized in industrial and consumer electronics applications, particularly for muting and switching functions. Its specifications, including a collector-emitter voltage of 20V and a collector current of 300mA, make it ideal for low-power switching applications in various electronic devices.
Detailed specification
Detailed specification
Bipolar transistors - BJT Dual Trans NPN x 2 20V, 0.3A, US6
Bipolar transistors - BJT Dual Trans NPN x 2 20V, 0.3A, US6
Description
Description
The HN1C03FU-B is a dual NPN bipolar transistor designed for muting and switching applications. It features a collector-emitter voltage of 20V, a collector current of 300mA, and a low on-state resistance (RON) of 1Ω. The device is housed in a US6 package, providing high emitter-base voltage (VEBO = 25V) and a typical reverse hFE of 150, making it suitable for various electronic circuits.
The HN1C03FU-B is a dual NPN bipolar transistor designed for muting and switching applications. It features a collector-emitter voltage of 20V, a collector current of 300mA, and a low on-state resistance (RON) of 1Ω. The device is housed in a US6 package, providing high emitter-base voltage (VEBO = 25V) and a typical reverse hFE of 150, making it suitable for various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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