HN1C01F-GR(TE85L,F
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
TRANS 2NPN 50V 0.15A SM6
TRANS 2NPN 50V 0.15A SM6
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 800MHz 300mW ytmonterad SM6
Bipolär (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 800MHz 300mW ytmonterad SM6
Beskrivning (eng)
Beskrivning (eng)
The HN1C01F-GR is a dual NPN bipolar transistor array designed for general-purpose amplification applications. It features a maximum collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 150mA, and a power dissipation of 300mW. With a high DC current gain (hFE) ranging from 120 to 400, it operates effectively at frequencies up to 800MHz, making it suitable for audio frequency applications.
The HN1C01F-GR is a dual NPN bipolar transistor array designed for general-purpose amplification applications. It features a maximum collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 150mA, and a power dissipation of 300mW. With a high DC current gain (hFE) ranging from 120 to 400, it operates effectively at frequencies up to 800MHz, making it suitable for audio frequency applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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