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Manufacturers

HN1C01F-GR(TE85L,F

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
HN1C01F-GR is utilized in audio frequency general-purpose amplifier applications, particularly in consumer electronics and telecommunications. Its high voltage and current ratings, along with excellent linearity and frequency response, make it ideal for various amplification tasks in compact designs.
Specification
Specification
TRANS 2NPN 50V 0.15A SM6
TRANS 2NPN 50V 0.15A SM6
Detailed specification
Detailed specification
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 800MHz 300mW surface-mounted SM6
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 800MHz 300mW surface-mounted SM6
Description
Description
The HN1C01F-GR is a dual NPN bipolar transistor array designed for general-purpose amplification applications. It features a maximum collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 150mA, and a power dissipation of 300mW. With a high DC current gain (hFE) ranging from 120 to 400, it operates effectively at frequencies up to 800MHz, making it suitable for audio frequency applications.
The HN1C01F-GR is a dual NPN bipolar transistor array designed for general-purpose amplification applications. It features a maximum collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 150mA, and a power dissipation of 300mW. With a high DC current gain (hFE) ranging from 120 to 400, it operates effectively at frequencies up to 800MHz, making it suitable for audio frequency applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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