GT40QR21(STA1,E,D
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
IGBT 1200V 40A TO3P
IGBT 1200V 40A TO3P
Detaljerad specifikation
Detaljerad specifikation
IGBT 1200 V 40 A 230 W Genomgående hål TO-3P(N)
IGBT 1200 V 40 A 230 W Genomgående hål TO-3P(N)
Beskrivning (eng)
Beskrivning (eng)
The GT40QR21 is a 1200V, 40A N-Channel IGBT in a TO-3P(N) package, designed for high-speed switching applications. It features a low saturation voltage of VCE(sat) = 1.9V (typ.) and a maximum junction temperature of 175°C. The device is optimized for voltage-resonant inverter switching applications, ensuring reliable performance in demanding environments.
The GT40QR21 is a 1200V, 40A N-Channel IGBT in a TO-3P(N) package, designed for high-speed switching applications. It features a low saturation voltage of VCE(sat) = 1.9V (typ.) and a maximum junction temperature of 175°C. The device is optimized for voltage-resonant inverter switching applications, ensuring reliable performance in demanding environments.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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