GT40QR21(STA1,E,D
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
IGBT 1200V 40A TO3P
IGBT 1200V 40A TO3P
Detailed specification
Detailed specification
IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)
IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)
Description
Description
The GT40QR21 is a 1200V, 40A N-Channel IGBT in a TO-3P(N) package, designed for high-speed switching applications. It features a low saturation voltage of VCE(sat) = 1.9V (typ.) and a maximum junction temperature of 175°C. The device is optimized for voltage-resonant inverter switching applications, ensuring reliable performance in demanding environments.
The GT40QR21 is a 1200V, 40A N-Channel IGBT in a TO-3P(N) package, designed for high-speed switching applications. It features a low saturation voltage of VCE(sat) = 1.9V (typ.) and a maximum junction temperature of 175°C. The device is optimized for voltage-resonant inverter switching applications, ensuring reliable performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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