GT30N135SRA,S1E(S
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
TOSHIBA - GT30N135SRA,S1E(S - IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Stift
TOSHIBA - GT30N135SRA,S1E(S - IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Stift
Beskrivning (eng)
Beskrivning (eng)
The TOSHIBA GT30N135SRA,S1E(S is a 6.5th generation N-Channel IGBT designed for high-speed switching applications. It features a collector-emitter voltage of 1350 V, a collector current of 60 A, and a low saturation voltage of 2.15 V. The device is housed in a TO-247 package and is suitable for voltage-resonant inverter and soft switching applications.
The TOSHIBA GT30N135SRA,S1E(S is a 6.5th generation N-Channel IGBT designed for high-speed switching applications. It features a collector-emitter voltage of 1350 V, a collector current of 60 A, and a low saturation voltage of 2.15 V. The device is housed in a TO-247 package and is suitable for voltage-resonant inverter and soft switching applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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