GT30N135SRA,S1E(S
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
TOSHIBA - GT30N135SRA,S1E(S - IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Pins
TOSHIBA - GT30N135SRA,S1E(S - IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Pins
Description
Description
The TOSHIBA GT30N135SRA,S1E(S is a 6.5th generation N-Channel IGBT designed for high-speed switching applications. It features a collector-emitter voltage of 1350 V, a collector current of 60 A, and a low saturation voltage of 2.15 V. The device is housed in a TO-247 package and is suitable for voltage-resonant inverter and soft switching applications.
The TOSHIBA GT30N135SRA,S1E(S is a 6.5th generation N-Channel IGBT designed for high-speed switching applications. It features a collector-emitter voltage of 1350 V, a collector current of 60 A, and a low saturation voltage of 2.15 V. The device is housed in a TO-247 package and is suitable for voltage-resonant inverter and soft switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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