GAN041-650WSBQ
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
GAN041-650WSB/SOT429/TO-247
GAN041-650WSB/SOT429/TO-247
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 650 V 47.2A (Tc) 187W (Tc) Genomgående hål TO-247-3
N-Kanal 650 V 47.2A (Tc) 187W (Tc) Genomgående hål TO-247-3
Beskrivning (eng)
Beskrivning (eng)
The GAN041-650WSB is a 650 V, 35 mΩ N-Channel Gallium Nitride (GaN) FET in a TO-247 package, designed for high-performance applications. It features a robust gate oxide, ultra-low reverse recovery charge, and a simple gate drive. With a maximum drain current of 47.2 A and total power dissipation of 187 W, it is ideal for hard and soft switching converters, PV and UPS inverters, and servo motor drives.
The GAN041-650WSB is a 650 V, 35 mΩ N-Channel Gallium Nitride (GaN) FET in a TO-247 package, designed for high-performance applications. It features a robust gate oxide, ultra-low reverse recovery charge, and a simple gate drive. With a maximum drain current of 47.2 A and total power dissipation of 187 W, it is ideal for hard and soft switching converters, PV and UPS inverters, and servo motor drives.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Bengt eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K