GAN041-650WSBQ
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
GAN041-650WSB/SOT429/TO-247
GAN041-650WSB/SOT429/TO-247
Detailed specification
Detailed specification
N-Channel 650 V 47.2A (Tc) 187W (Tc) Through Hole TO-247-3
N-Channel 650 V 47.2A (Tc) 187W (Tc) Through Hole TO-247-3
Description
Description
The GAN041-650WSB is a 650 V, 35 mΩ N-Channel Gallium Nitride (GaN) FET in a TO-247 package, designed for high-performance applications. It features a robust gate oxide, ultra-low reverse recovery charge, and a simple gate drive. With a maximum drain current of 47.2 A and total power dissipation of 187 W, it is ideal for hard and soft switching converters, PV and UPS inverters, and servo motor drives.
The GAN041-650WSB is a 650 V, 35 mΩ N-Channel Gallium Nitride (GaN) FET in a TO-247 package, designed for high-performance applications. It features a robust gate oxide, ultra-low reverse recovery charge, and a simple gate drive. With a maximum drain current of 47.2 A and total power dissipation of 187 W, it is ideal for hard and soft switching converters, PV and UPS inverters, and servo motor drives.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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