G12180-010A
Tillverkare
HAMAMATSU
Detaljerad specifikation
Detaljerad specifikation
HAMAMATSU - G12180-010A - Fotodiod, InGaAs, 1550 nm, -40°C till 100°C, TO-18-3, G12180 Serien
HAMAMATSU - G12180-010A - Fotodiod, InGaAs, 1550 nm, -40°C till 100°C, TO-18-3, G12180 Serien
Beskrivning (eng)
Beskrivning (eng)
The HAMAMATSU G12180-010A is an InGaAs PIN photodiode designed for high sensitivity at a peak wavelength of 1550 nm. It operates within a temperature range of -40°C to 100°C and features a photosensitive area of ϕ1 mm. This device exhibits low noise, low dark current, and large shunt resistance, making it suitable for applications in optical communications, laser monitoring, and NIR photometry.
The HAMAMATSU G12180-010A is an InGaAs PIN photodiode designed for high sensitivity at a peak wavelength of 1550 nm. It operates within a temperature range of -40°C to 100°C and features a photosensitive area of ϕ1 mm. This device exhibits low noise, low dark current, and large shunt resistance, making it suitable for applications in optical communications, laser monitoring, and NIR photometry.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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