G12180-010A
Manufacturer
HAMAMATSU
Data sheet
Data sheet
Detailed specification
Detailed specification
HAMAMATSU - G12180-010A - Photo Diode, InGaAs, 1550 nm, -40°C to 100°C, TO-18-3, G12180 Series
HAMAMATSU - G12180-010A - Photo Diode, InGaAs, 1550 nm, -40°C to 100°C, TO-18-3, G12180 Series
Description
Description
The HAMAMATSU G12180-010A is an InGaAs PIN photodiode designed for high sensitivity at a peak wavelength of 1550 nm. It operates within a temperature range of -40°C to 100°C and features a photosensitive area of ϕ1 mm. This device exhibits low noise, low dark current, and large shunt resistance, making it suitable for applications in optical communications, laser monitoring, and NIR photometry.
The HAMAMATSU G12180-010A is an InGaAs PIN photodiode designed for high sensitivity at a peak wavelength of 1550 nm. It operates within a temperature range of -40°C to 100°C and features a photosensitive area of ϕ1 mm. This device exhibits low noise, low dark current, and large shunt resistance, making it suitable for applications in optical communications, laser monitoring, and NIR photometry.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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