FDN352AP
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 30V 1.3A SOT23
MOSFET P-CH 30V 1.3A SOT23
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The FDN352AP is a P-Channel MOSFET with a maximum Drain-Source Voltage of -30V and a continuous Drain Current of -1.3A. It features a low RDS(ON) of 180 mΩ at VGS = -10V, making it suitable for low voltage and battery-powered applications. The device is housed in a SOT-23 package, providing high power handling capability.
The FDN352AP is a P-Channel MOSFET with a maximum Drain-Source Voltage of -30V and a continuous Drain Current of -1.3A. It features a low RDS(ON) of 180 mΩ at VGS = -10V, making it suitable for low voltage and battery-powered applications. The device is housed in a SOT-23 package, providing high power handling capability.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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