FDN352AP
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET P-CH 30V 1.3A SUPERSOT3
MOSFET P-CH 30V 1.3A SUPERSOT3
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 30 V 1.3A (Ta) 500mW (Ta) ytmonterad SOT-23-3
P-Kanal 30 V 1.3A (Ta) 500mW (Ta) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The FDN352AP is a P-Channel MOSFET designed for low voltage and battery-powered applications. It features a maximum drain-source voltage of -30V and a continuous drain current of -1.3A. With a low on-state resistance (RDS(on)) of 180 mΩ at VGS = -10V, it ensures minimal power loss in a compact SOT-23-3 package, making it ideal for efficient power management in portable devices.
The FDN352AP is a P-Channel MOSFET designed for low voltage and battery-powered applications. It features a maximum drain-source voltage of -30V and a continuous drain current of -1.3A. With a low on-state resistance (RDS(on)) of 180 mΩ at VGS = -10V, it ensures minimal power loss in a compact SOT-23-3 package, making it ideal for efficient power management in portable devices.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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