FDN352AP
Tillverkare
FAIRCHILD SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
SMALL SIGNAL FIELD-EFFECT TRANSI
SMALL SIGNAL FIELD-EFFECT TRANSI
Detaljerad specifikation
Detaljerad specifikation
P-Kanal 30 V 1.3A (Ta) 500mW (Ta) ytmonterad SOT-23-3
P-Kanal 30 V 1.3A (Ta) 500mW (Ta) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The FDN352AP is a P-Channel small signal field-effect transistor (FET) designed for low voltage applications. It features a maximum drain-source voltage of 30 V and a continuous drain current rating of 1.3 A at ambient temperature (Ta). The device has a power dissipation capability of 500 mW (Ta) and is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. This FET is ideal for use in switching and amplification applications in consumer electronics and automotive circuits.
The FDN352AP is a P-Channel small signal field-effect transistor (FET) designed for low voltage applications. It features a maximum drain-source voltage of 30 V and a continuous drain current rating of 1.3 A at ambient temperature (Ta). The device has a power dissipation capability of 500 mW (Ta) and is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. This FET is ideal for use in switching and amplification applications in consumer electronics and automotive circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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