DN2625DK6-G
Tillverkare
MICROCHIP TECHNOLOGY
Datablad
Datablad
Specifikation
Specifikation
MOSFET 2N-CH 250V 1.1A 8DFN
MOSFET 2N-CH 250V 1.1A 8DFN
Detaljerad specifikation
Detaljerad specifikation
Mosfet Array 250V 1.1A Ytmonterad 8-DFN (5x5 mm) (0.20x0.20 in)
Mosfet Array 250V 1.1A Ytmonterad 8-DFN (5x5 mm) (0.20x0.20 in)
Beskrivning (eng)
Beskrivning (eng)
The DN2625DK6-G is a dual N-channel depletion-mode MOSFET array designed for high-performance applications. It features a breakdown voltage of 250V, a continuous drain current of 1.1A, and a low on-state resistance (RDS(on)) of 3.5Ω. This device is optimized for inductive loads and offers low switching losses and effective output capacitance, making it suitable for various applications in medical ultrasound and waveform generation.
The DN2625DK6-G is a dual N-channel depletion-mode MOSFET array designed for high-performance applications. It features a breakdown voltage of 250V, a continuous drain current of 1.1A, and a low on-state resistance (RDS(on)) of 3.5Ω. This device is optimized for inductive loads and offers low switching losses and effective output capacitance, making it suitable for various applications in medical ultrasound and waveform generation.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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