DN2625DK6-G
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
MOSFET 2N-CH 250V 1.1A 8DFN
MOSFET 2N-CH 250V 1.1A 8DFN
Detailed specification
Detailed specification
Mosfet Array 250V 1.1A Surface Mount 8-DFN (5x5 mm) (0.20x0.20 in)
Mosfet Array 250V 1.1A Surface Mount 8-DFN (5x5 mm) (0.20x0.20 in)
Description
Description
The DN2625DK6-G is a dual N-channel depletion-mode MOSFET array designed for high-performance applications. It features a breakdown voltage of 250V, a continuous drain current of 1.1A, and a low on-state resistance (RDS(on)) of 3.5Ω. This device is optimized for inductive loads and offers low switching losses and effective output capacitance, making it suitable for various applications in medical ultrasound and waveform generation.
The DN2625DK6-G is a dual N-channel depletion-mode MOSFET array designed for high-performance applications. It features a breakdown voltage of 250V, a continuous drain current of 1.1A, and a low on-state resistance (RDS(on)) of 3.5Ω. This device is optimized for inductive loads and offers low switching losses and effective output capacitance, making it suitable for various applications in medical ultrasound and waveform generation.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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