BSS123
Tillverkare
UMW YOUTAI SEMICONDUCTOR
Specifikation
Specifikation
MOSFET N-CH 100V 170MA SOT23
MOSFET N-CH 100V 170MA SOT23
Detaljerad specifikation
Detaljerad specifikation
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Beskrivning (eng)
Beskrivning (eng)
The BSS123 is an N-channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 170mA, making it suitable for low to medium power applications. Packaged in a compact SOT23 form factor, this MOSFET is ideal for space-constrained designs. Its low RDS(on) ensures minimal power loss during operation, enhancing overall circuit efficiency. The BSS123 is commonly used in power management, signal switching, and other electronic control applications.
The BSS123 is an N-channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 170mA, making it suitable for low to medium power applications. Packaged in a compact SOT23 form factor, this MOSFET is ideal for space-constrained designs. Its low RDS(on) ensures minimal power loss during operation, enhancing overall circuit efficiency. The BSS123 is commonly used in power management, signal switching, and other electronic control applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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