BSS123
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 100V 170MA SOT23-3
MOSFET N-CH 100V 170MA SOT23-3
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 100 V 200mA 350mW (Ta) ytmonterad SOT-23-3
N-Kanal 100 V 200mA 350mW (Ta) ytmonterad SOT-23-3
Beskrivning (eng)
Beskrivning (eng)
The BSS123 is an N-Channel enhancement mode MOSFET designed for low voltage, low current applications. It features a maximum drain-source voltage of 100 V, continuous drain current of 170 mA, and a power dissipation of 350 mW. The device is housed in a compact SOT-23-3 package, providing excellent switching performance with low on-state resistance (RDS(on)) of 6 Ω at VGS = 10 V.
The BSS123 is an N-Channel enhancement mode MOSFET designed for low voltage, low current applications. It features a maximum drain-source voltage of 100 V, continuous drain current of 170 mA, and a power dissipation of 350 mW. The device is housed in a compact SOT-23-3 package, providing excellent switching performance with low on-state resistance (RDS(on)) of 6 Ω at VGS = 10 V.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
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