BC858W,135
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
NOW NEXPERIA BC858W - SMALL SIGN
NOW NEXPERIA BC858W - SMALL SIGN
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 30 V 100 mA 100MHz 200 mW ytmonterad SOT-323
Bipolär (BJT) Transistor PNP 30 V 100 mA 100MHz 200 mW ytmonterad SOT-323
Beskrivning (eng)
Beskrivning (eng)
The NXP BC858W is a PNP bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 30 V and can handle a collector current of up to 100 mA, making it suitable for various switching and amplification tasks. With a transition frequency of 100 MHz and a power dissipation of 200 mW, this surface-mounted device is housed in a compact SOT-323 package, ensuring efficient space utilization on PCBs. Its small size and performance characteristics make it ideal for consumer electronics and communication devices.
The NXP BC858W is a PNP bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 30 V and can handle a collector current of up to 100 mA, making it suitable for various switching and amplification tasks. With a transition frequency of 100 MHz and a power dissipation of 200 mW, this surface-mounted device is housed in a compact SOT-323 package, ensuring efficient space utilization on PCBs. Its small size and performance characteristics make it ideal for consumer electronics and communication devices.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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