BC858W,135
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NOW NEXPERIA BC858W - SMALL SIGN
NOW NEXPERIA BC858W - SMALL SIGN
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 200 mW surface-mounted SOT-323
Bipolar (BJT) Transistor PNP 30 V 100 mA 100MHz 200 mW surface-mounted SOT-323
Description
Description
The NXP BC858W is a PNP bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 30 V and can handle a collector current of up to 100 mA, making it suitable for various switching and amplification tasks. With a transition frequency of 100 MHz and a power dissipation of 200 mW, this surface-mounted device is housed in a compact SOT-323 package, ensuring efficient space utilization on PCBs. Its small size and performance characteristics make it ideal for consumer electronics and communication devices.
The NXP BC858W is a PNP bipolar junction transistor (BJT) designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 30 V and can handle a collector current of up to 100 mA, making it suitable for various switching and amplification tasks. With a transition frequency of 100 MHz and a power dissipation of 200 mW, this surface-mounted device is housed in a compact SOT-323 package, ensuring efficient space utilization on PCBs. Its small size and performance characteristics make it ideal for consumer electronics and communication devices.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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