BC857CE6327HTSA1
Tillverkare
INFINEON
Datablad
Datablad
Specifikation
Specifikation
BJT SOT23 45V PNP 0.25W 150C
BJT SOT23 45V PNP 0.25W 150C
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 45 V 100 mA 250MHz 330 mW ytmonterad PG-SOT23
Bipolär (BJT) Transistor PNP 45 V 100 mA 250MHz 330 mW ytmonterad PG-SOT23
Beskrivning (eng)
Beskrivning (eng)
The BC857CE6327HTSA1 is a PNP bipolar junction transistor (BJT) in a SOT23 package, rated for a collector-emitter voltage of 45V and a maximum collector current of 100mA. It features a low collector-emitter saturation voltage and high current gain, making it suitable for audio frequency input stages and driver applications. The device operates up to 250MHz and has a power dissipation of 330mW, with a junction temperature rating of 150°C.
The BC857CE6327HTSA1 is a PNP bipolar junction transistor (BJT) in a SOT23 package, rated for a collector-emitter voltage of 45V and a maximum collector current of 100mA. It features a low collector-emitter saturation voltage and high current gain, making it suitable for audio frequency input stages and driver applications. The device operates up to 250MHz and has a power dissipation of 330mW, with a junction temperature rating of 150°C.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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