BC857CE6327HTSA1
Manufacturer
INFINEON
Data sheet
Data sheet
Specification
Specification
BJT SOT23 45V PNP 0.25W 150C
BJT SOT23 45V PNP 0.25W 150C
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 45 V 100 mA 250MHz 330 mW surface-mounted PG-SOT23
Bipolar (BJT) Transistor PNP 45 V 100 mA 250MHz 330 mW surface-mounted PG-SOT23
Description
Description
The BC857CE6327HTSA1 is a PNP bipolar junction transistor (BJT) in a SOT23 package, rated for a collector-emitter voltage of 45V and a maximum collector current of 100mA. It features a low collector-emitter saturation voltage and high current gain, making it suitable for audio frequency input stages and driver applications. The device operates up to 250MHz and has a power dissipation of 330mW, with a junction temperature rating of 150°C.
The BC857CE6327HTSA1 is a PNP bipolar junction transistor (BJT) in a SOT23 package, rated for a collector-emitter voltage of 45V and a maximum collector current of 100mA. It features a low collector-emitter saturation voltage and high current gain, making it suitable for audio frequency input stages and driver applications. The device operates up to 250MHz and has a power dissipation of 330mW, with a junction temperature rating of 150°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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