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BC857CE6327HTSA1

Manufacturer

INFINEON

data-sheet
Data sheet
Data sheet
BC857CE6327HTSA1 is designed for use in industrial and consumer electronics applications, particularly in audio frequency input stages and driver circuits. Its high current gain and low noise characteristics make it ideal for amplifying signals in various electronic devices, ensuring reliable performance in demanding environments.
Specification
Specification
BJT SOT23 45V PNP 0.25W 150C
BJT SOT23 45V PNP 0.25W 150C
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 45 V 100 mA 250MHz 330 mW surface-mounted PG-SOT23
Bipolar (BJT) Transistor PNP 45 V 100 mA 250MHz 330 mW surface-mounted PG-SOT23
Description
Description
The BC857CE6327HTSA1 is a PNP bipolar junction transistor (BJT) in a SOT23 package, rated for a collector-emitter voltage of 45V and a maximum collector current of 100mA. It features a low collector-emitter saturation voltage and high current gain, making it suitable for audio frequency input stages and driver applications. The device operates up to 250MHz and has a power dissipation of 330mW, with a junction temperature rating of 150°C.
The BC857CE6327HTSA1 is a PNP bipolar junction transistor (BJT) in a SOT23 package, rated for a collector-emitter voltage of 45V and a maximum collector current of 100mA. It features a low collector-emitter saturation voltage and high current gain, making it suitable for audio frequency input stages and driver applications. The device operates up to 250MHz and has a power dissipation of 330mW, with a junction temperature rating of 150°C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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