BAS21QC-QZ
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
DIODE GP 200V 250MA DFN1412D-3
DIODE GP 200V 250MA DFN1412D-3
Detaljerad specifikation
Detaljerad specifikation
Diode 200 V 250mA ytmonterad, Wettable Flank DFN1412D-3
Diode 200 V 250mA ytmonterad, Wettable Flank DFN1412D-3
Beskrivning (eng)
Beskrivning (eng)
The BAS21QC-QZ is a high-voltage switching diode encapsulated in a compact DFN1412D-3 (SOT8009) leadless surface-mounted device. It features a reverse voltage rating of 200 V, forward current of 250 mA, and a low reverse recovery time (trr ≤ 50 ns). The diode is suitable for high-speed switching and general-purpose applications, with a low leakage current and capacitance of 5 pF.
The BAS21QC-QZ is a high-voltage switching diode encapsulated in a compact DFN1412D-3 (SOT8009) leadless surface-mounted device. It features a reverse voltage rating of 200 V, forward current of 250 mA, and a low reverse recovery time (trr ≤ 50 ns). The diode is suitable for high-speed switching and general-purpose applications, with a low leakage current and capacitance of 5 pF.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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