BAS21QC-QZ
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
DIODE GP 200V 250MA DFN1412D-3
DIODE GP 200V 250MA DFN1412D-3
Detailed specification
Detailed specification
Diode 200 V 250mA surface-mounted, Wettable Flank DFN1412D-3
Diode 200 V 250mA surface-mounted, Wettable Flank DFN1412D-3
Description
Description
The BAS21QC-QZ is a high-voltage switching diode encapsulated in a compact DFN1412D-3 (SOT8009) leadless surface-mounted device. It features a reverse voltage rating of 200 V, forward current of 250 mA, and a low reverse recovery time (trr ≤ 50 ns). The diode is suitable for high-speed switching and general-purpose applications, with a low leakage current and capacitance of 5 pF.
The BAS21QC-QZ is a high-voltage switching diode encapsulated in a compact DFN1412D-3 (SOT8009) leadless surface-mounted device. It features a reverse voltage rating of 200 V, forward current of 250 mA, and a low reverse recovery time (trr ≤ 50 ns). The diode is suitable for high-speed switching and general-purpose applications, with a low leakage current and capacitance of 5 pF.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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