AFGB30T65SQDN
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
650V/30A FS4 IGBT TO263 A
650V/30A FS4 IGBT TO263 A
Detaljerad specifikation
Detaljerad specifikation
IGBT 650 V 60 A 220 W Ytmonterad TO-263 (D2PAK)
IGBT 650 V 60 A 220 W Ytmonterad TO-263 (D2PAK)
Beskrivning (eng)
Beskrivning (eng)
The AFGB30T65SQDN is a 650V, 30A IGBT in a D2PAK (TO-263) package, designed for high-speed switching applications. It features a maximum junction temperature of 175°C, a collector-to-emitter saturation voltage (VCE(sat)) of 1.6V at 30A, and a maximum power dissipation of 220W. This device is suitable for automotive applications, including on-board chargers and DC/DC converters for hybrid electric vehicles (HEVs).
The AFGB30T65SQDN is a 650V, 30A IGBT in a D2PAK (TO-263) package, designed for high-speed switching applications. It features a maximum junction temperature of 175°C, a collector-to-emitter saturation voltage (VCE(sat)) of 1.6V at 30A, and a maximum power dissipation of 220W. This device is suitable for automotive applications, including on-board chargers and DC/DC converters for hybrid electric vehicles (HEVs).
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
Hämta lagerstatus
Kontakta säljare
Kontakta Bengt eller någon annan av våra duktiga säljare. De hjälper dig att hitta rätt servicealterntativ.K