AFGB30T65SQDN
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
650V/30A FS4 IGBT TO263 A
650V/30A FS4 IGBT TO263 A
Detailed specification
Detailed specification
IGBT 650 V 60 A 220 W Surface Mount TO-263 (D2PAK)
IGBT 650 V 60 A 220 W Surface Mount TO-263 (D2PAK)
Description
Description
The AFGB30T65SQDN is a 650V, 30A IGBT in a D2PAK (TO-263) package, designed for high-speed switching applications. It features a maximum junction temperature of 175°C, a collector-to-emitter saturation voltage (VCE(sat)) of 1.6V at 30A, and a maximum power dissipation of 220W. This device is suitable for automotive applications, including on-board chargers and DC/DC converters for hybrid electric vehicles (HEVs).
The AFGB30T65SQDN is a 650V, 30A IGBT in a D2PAK (TO-263) package, designed for high-speed switching applications. It features a maximum junction temperature of 175°C, a collector-to-emitter saturation voltage (VCE(sat)) of 1.6V at 30A, and a maximum power dissipation of 220W. This device is suitable for automotive applications, including on-board chargers and DC/DC converters for hybrid electric vehicles (HEVs).
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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