A2T09D400-23NR6
Tillverkare
NXP
Datablad
Datablad
Specifikation
Specifikation
RF MOSFET LDMOS 28V OM1230-42
RF MOSFET LDMOS 28V OM1230-42
Detaljerad specifikation
Detaljerad specifikation
RF Mosfet 28 V 1.2 A 716MHz ~ 960MHz 17.8dB 400W OM-1230-4L2S
RF Mosfet 28 V 1.2 A 716MHz ~ 960MHz 17.8dB 400W OM-1230-4L2S
Beskrivning (eng)
Beskrivning (eng)
The A2T09D400-23NR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 28V with a maximum output power of 93W in the frequency range of 716 to 960 MHz. This N-channel enhancement-mode LDMOS transistor features a typical power gain of 17.8 dB and is optimized for Doherty amplifier configurations, ensuring efficient operation in W-CDMA systems.
The A2T09D400-23NR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 28V with a maximum output power of 93W in the frequency range of 716 to 960 MHz. This N-channel enhancement-mode LDMOS transistor features a typical power gain of 17.8 dB and is optimized for Doherty amplifier configurations, ensuring efficient operation in W-CDMA systems.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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