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A2T09D400-23NR6

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
A2T09D400-23NR6 is utilized in RF power amplification for cellular base stations, particularly in W-CDMA applications. Its design supports high efficiency and linearity, making it suitable for modern telecommunications infrastructure, enhancing signal quality and coverage.
Specification
Specification
RF MOSFET LDMOS 28V OM1230-42
RF MOSFET LDMOS 28V OM1230-42
Detailed specification
Detailed specification
RF Mosfet 28 V 1.2 A 716MHz ~ 960MHz 17.8dB 400W OM-1230-4L2S
RF Mosfet 28 V 1.2 A 716MHz ~ 960MHz 17.8dB 400W OM-1230-4L2S
Description
Description
The A2T09D400-23NR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 28V with a maximum output power of 93W in the frequency range of 716 to 960 MHz. This N-channel enhancement-mode LDMOS transistor features a typical power gain of 17.8 dB and is optimized for Doherty amplifier configurations, ensuring efficient operation in W-CDMA systems.
The A2T09D400-23NR6 is a high-performance RF power LDMOS transistor designed for cellular base station applications. It operates at 28V with a maximum output power of 93W in the frequency range of 716 to 960 MHz. This N-channel enhancement-mode LDMOS transistor features a typical power gain of 17.8 dB and is optimized for Doherty amplifier configurations, ensuring efficient operation in W-CDMA systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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