2SK3564(STA4,Q,M)
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
MOSFET N-CH 900V 3A TO220SIS
MOSFET N-CH 900V 3A TO220SIS
Detaljerad specifikation
Detaljerad specifikation
N-Kanal 900 V 3A (Ta) 40W (Tc) Genomgående hål TO-220SIS
N-Kanal 900 V 3A (Ta) 40W (Tc) Genomgående hål TO-220SIS
Beskrivning (eng)
Beskrivning (eng)
The Toshiba 2SK3564 is an N-Channel MOSFET rated for 900V and 3A, housed in a TO-220SIS package. It features a low RDS(on) of 3.7 Ω (typ.), high forward transfer admittance of 2.6 S (typ.), and a maximum drain power dissipation of 40W. This device is suitable for switching regulator applications, with a gate threshold voltage ranging from 2.0 to 4.0 V.
The Toshiba 2SK3564 is an N-Channel MOSFET rated for 900V and 3A, housed in a TO-220SIS package. It features a low RDS(on) of 3.7 Ω (typ.), high forward transfer admittance of 2.6 S (typ.), and a maximum drain power dissipation of 40W. This device is suitable for switching regulator applications, with a gate threshold voltage ranging from 2.0 to 4.0 V.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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