2SK3564(STA4,Q,M)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 900V 3A TO220SIS
MOSFET N-CH 900V 3A TO220SIS
Detailed specification
Detailed specification
N-Channel 900 V 3A (Ta) 40W (Tc) Through Hole TO-220SIS
N-Channel 900 V 3A (Ta) 40W (Tc) Through Hole TO-220SIS
Description
Description
The Toshiba 2SK3564 is an N-Channel MOSFET rated for 900V and 3A, housed in a TO-220SIS package. It features a low RDS(on) of 3.7 Ω (typ.), high forward transfer admittance of 2.6 S (typ.), and a maximum drain power dissipation of 40W. This device is suitable for switching regulator applications, with a gate threshold voltage ranging from 2.0 to 4.0 V.
The Toshiba 2SK3564 is an N-Channel MOSFET rated for 900V and 3A, housed in a TO-220SIS package. It features a low RDS(on) of 3.7 Ω (typ.), high forward transfer admittance of 2.6 S (typ.), and a maximum drain power dissipation of 40W. This device is suitable for switching regulator applications, with a gate threshold voltage ranging from 2.0 to 4.0 V.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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