2SK3075(TE12L,Q)
Tillverkare
TOSHIBA
Detaljerad specifikation
Detaljerad specifikation
RF MOSFET-transistorer N-Ch Radio Freq 5A 20W 30V VDSS
RF MOSFET-transistorer N-Ch Radio Freq 5A 20W 30V VDSS
Beskrivning (eng)
Beskrivning (eng)
The 2SK3075 is an N-Channel RF Power MOSFET designed for VHF and UHF band power amplifiers. It features a drain-source voltage (VDSS) of 30V, a drain current (ID) of 5A, and a power dissipation (PD) of 20W. With an output power of 7.5W and a power gain of 11.7dB, it is optimized for high-frequency telecommunications applications.
The 2SK3075 is an N-Channel RF Power MOSFET designed for VHF and UHF band power amplifiers. It features a drain-source voltage (VDSS) of 30V, a drain current (ID) of 5A, and a power dissipation (PD) of 20W. With an output power of 7.5W and a power gain of 11.7dB, it is optimized for high-frequency telecommunications applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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