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2SK3075(TE12L,Q)

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
The 2SK3075 is intended for use in high-frequency power amplifiers within telecommunications equipment, specifically designed for VHF and UHF bands. Its specifications make it suitable for applications requiring efficient RF power amplification, ensuring reliable performance in communication systems.
Detailed specification
Detailed specification
RF MOSFET transistors N-Ch Radio Freq 5A 20W 30V VDSS
RF MOSFET transistors N-Ch Radio Freq 5A 20W 30V VDSS
Description
Description
The 2SK3075 is an N-Channel RF Power MOSFET designed for VHF and UHF band power amplifiers. It features a drain-source voltage (VDSS) of 30V, a drain current (ID) of 5A, and a power dissipation (PD) of 20W. With an output power of 7.5W and a power gain of 11.7dB, it is optimized for high-frequency telecommunications applications.
The 2SK3075 is an N-Channel RF Power MOSFET designed for VHF and UHF band power amplifiers. It features a drain-source voltage (VDSS) of 30V, a drain current (ID) of 5A, and a power dissipation (PD) of 20W. With an output power of 7.5W and a power gain of 11.7dB, it is optimized for high-frequency telecommunications applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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