2SC5359-O(Q)
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
TRANS NPN 230V 15A TO3P
TRANS NPN 230V 15A TO3P
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor NPN 230 V 15 A 30 MHz 180 W Genomgående hål TO-3P(L)
Bipolär (BJT) Transistor NPN 230 V 15 A 30 MHz 180 W Genomgående hål TO-3P(L)
Beskrivning (eng)
Beskrivning (eng)
The Toshiba 2SC5359-O(Q) is a high-performance NPN bipolar transistor designed for power amplifier applications. It features a high breakdown voltage of 230 V, a collector current rating of 15 A, and a power dissipation capability of 180 W. This transistor operates at a transition frequency of 30 MHz and is suitable for use in high-fidelity audio amplifier output stages.
The Toshiba 2SC5359-O(Q) is a high-performance NPN bipolar transistor designed for power amplifier applications. It features a high breakdown voltage of 230 V, a collector current rating of 15 A, and a power dissipation capability of 180 W. This transistor operates at a transition frequency of 30 MHz and is suitable for use in high-fidelity audio amplifier output stages.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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