2SC5359-O(Q)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 230V 15A TO3P
TRANS NPN 230V 15A TO3P
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 230 V 15 A 30 MHz 180 W Through Hole TO-3P(L)
Bipolar (BJT) Transistor NPN 230 V 15 A 30 MHz 180 W Through Hole TO-3P(L)
Description
Description
The Toshiba 2SC5359-O(Q) is a high-performance NPN bipolar transistor designed for power amplifier applications. It features a high breakdown voltage of 230 V, a collector current rating of 15 A, and a power dissipation capability of 180 W. This transistor operates at a transition frequency of 30 MHz and is suitable for use in high-fidelity audio amplifier output stages.
The Toshiba 2SC5359-O(Q) is a high-performance NPN bipolar transistor designed for power amplifier applications. It features a high breakdown voltage of 230 V, a collector current rating of 15 A, and a power dissipation capability of 180 W. This transistor operates at a transition frequency of 30 MHz and is suitable for use in high-fidelity audio amplifier output stages.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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