2SC4117-GR,LF(T
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
TOSHIBA - 2SC4117-GR,LF(T - Bipolär (BJT) Enkel Transistor, NPN, 120 V, 100 mA, 200 mW, SOT-323, ytmonterad.
TOSHIBA - 2SC4117-GR,LF(T - Bipolär (BJT) Enkel Transistor, NPN, 120 V, 100 mA, 200 mW, SOT-323, ytmonterad.
Beskrivning (eng)
Beskrivning (eng)
The TOSHIBA 2SC4117-GR,LF(T) is a silicon NPN epitaxial bipolar transistor designed for audio frequency general-purpose amplifier applications. It features a high voltage rating of VCEO = 120 V, a collector current of 100 mA, and a power dissipation of 200 mW. The device exhibits excellent hFE linearity with a typical hFE range of 200 to 700 and low noise characteristics, making it suitable for various electronic applications.
The TOSHIBA 2SC4117-GR,LF(T) is a silicon NPN epitaxial bipolar transistor designed for audio frequency general-purpose amplifier applications. It features a high voltage rating of VCEO = 120 V, a collector current of 100 mA, and a power dissipation of 200 mW. The device exhibits excellent hFE linearity with a typical hFE range of 200 to 700 and low noise characteristics, making it suitable for various electronic applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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