2SC4117-GR,LF(T
Manufacturer
TOSHIBA
Data sheet
Data sheet
Detailed specification
Detailed specification
TOSHIBA - 2SC4117-GR,LF(T - Bipolar (BJT) Single Transistor, NPN, 120 V, 100 mA, 200 mW, SOT-323, surface-mounted.
TOSHIBA - 2SC4117-GR,LF(T - Bipolar (BJT) Single Transistor, NPN, 120 V, 100 mA, 200 mW, SOT-323, surface-mounted.
Description
Description
The TOSHIBA 2SC4117-GR,LF(T) is a silicon NPN epitaxial bipolar transistor designed for audio frequency general-purpose amplifier applications. It features a high voltage rating of VCEO = 120 V, a collector current of 100 mA, and a power dissipation of 200 mW. The device exhibits excellent hFE linearity with a typical hFE range of 200 to 700 and low noise characteristics, making it suitable for various electronic applications.
The TOSHIBA 2SC4117-GR,LF(T) is a silicon NPN epitaxial bipolar transistor designed for audio frequency general-purpose amplifier applications. It features a high voltage rating of VCEO = 120 V, a collector current of 100 mA, and a power dissipation of 200 mW. The device exhibits excellent hFE linearity with a typical hFE range of 200 to 700 and low noise characteristics, making it suitable for various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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