2SC2881-Y(TE12L,ZC
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
PB-F POWER TRANSISTOR PW-MINI PC
PB-F POWER TRANSISTOR PW-MINI PC
Detaljerad specifikation
Detaljerad specifikation
Bipolar (BJT) Transistor NPN 120 V 800 mA 120 MHz 500 mW ytmonterad PW-MINI
Bipolar (BJT) Transistor NPN 120 V 800 mA 120 MHz 500 mW ytmonterad PW-MINI
Beskrivning (eng)
Beskrivning (eng)
The 2SC2881-Y is a high-performance NPN bipolar transistor designed for voltage amplifier and power amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 120 V, a collector current (IC) of 800 mA, and a transition frequency (fT) of 120 MHz. This surface-mounted device is housed in a compact PW-MINI package, offering efficient power dissipation of 500 mW.
The 2SC2881-Y is a high-performance NPN bipolar transistor designed for voltage amplifier and power amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 120 V, a collector current (IC) of 800 mA, and a transition frequency (fT) of 120 MHz. This surface-mounted device is housed in a compact PW-MINI package, offering efficient power dissipation of 500 mW.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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