2SC2881-Y(TE12L,ZC
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
PB-F POWER TRANSISTOR PW-MINI PC
PB-F POWER TRANSISTOR PW-MINI PC
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 120 V 800 mA 120 MHz 500 mW surface-mounted PW-MINI
Bipolar (BJT) Transistor NPN 120 V 800 mA 120 MHz 500 mW surface-mounted PW-MINI
Description
Description
The 2SC2881-Y is a high-performance NPN bipolar transistor designed for voltage amplifier and power amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 120 V, a collector current (IC) of 800 mA, and a transition frequency (fT) of 120 MHz. This surface-mounted device is housed in a compact PW-MINI package, offering efficient power dissipation of 500 mW.
The 2SC2881-Y is a high-performance NPN bipolar transistor designed for voltage amplifier and power amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 120 V, a collector current (IC) of 800 mA, and a transition frequency (fT) of 120 MHz. This surface-mounted device is housed in a compact PW-MINI package, offering efficient power dissipation of 500 mW.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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