2SC2712-O(TE85L,F)
Tillverkare
TOSHIBA
Datablad
Datablad
Detaljerad specifikation
Detaljerad specifikation
TOSHIBA - 2SC2712-O(TE85L,F) - Bipolär (BJT) Enkel Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-346, ytmonterad.
TOSHIBA - 2SC2712-O(TE85L,F) - Bipolär (BJT) Enkel Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-346, ytmonterad.
Beskrivning (eng)
Beskrivning (eng)
The TOSHIBA 2SC2712-O(TE85L,F) is a silicon NPN bipolar transistor designed for low-frequency and audio frequency amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 150 mA, and a power dissipation of 200 mW. The device is housed in a SOT-346 surface mount package, ensuring compact integration in electronic circuits.
The TOSHIBA 2SC2712-O(TE85L,F) is a silicon NPN bipolar transistor designed for low-frequency and audio frequency amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 150 mA, and a power dissipation of 200 mW. The device is housed in a SOT-346 surface mount package, ensuring compact integration in electronic circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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