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Manufacturers

2SC2712-O(TE85L,F)

Manufacturer

TOSHIBA

data-sheet
Data sheet
Data sheet
The TOSHIBA 2SC2712-O(TE85L,F) is suitable for low-frequency amplifiers and audio frequency general-purpose amplifier applications. Its high voltage and current ratings make it ideal for consumer electronics and telecommunications, where reliable amplification is essential.
Detailed specification
Detailed specification
TOSHIBA - 2SC2712-O(TE85L,F) - Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-346, surface-mounted.
TOSHIBA - 2SC2712-O(TE85L,F) - Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-346, surface-mounted.
Description
Description
The TOSHIBA 2SC2712-O(TE85L,F) is a silicon NPN bipolar transistor designed for low-frequency and audio frequency amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 150 mA, and a power dissipation of 200 mW. The device is housed in a SOT-346 surface mount package, ensuring compact integration in electronic circuits.
The TOSHIBA 2SC2712-O(TE85L,F) is a silicon NPN bipolar transistor designed for low-frequency and audio frequency amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 150 mA, and a power dissipation of 200 mW. The device is housed in a SOT-346 surface mount package, ensuring compact integration in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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