2SA1987-O(Q)
Tillverkare
TOSHIBA
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 230V 15A TO3P
TRANS PNP 230V 15A TO3P
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 230 V 15 A 30MHz 180 W Genomgående hål TO-3P(L)
Bipolär (BJT) Transistor PNP 230 V 15 A 30MHz 180 W Genomgående hål TO-3P(L)
Beskrivning (eng)
Beskrivning (eng)
The Toshiba 2SA1987-O(Q) is a PNP bipolar junction transistor designed for power amplifier applications. It features a high breakdown voltage of VCEO = -230 V and a collector current rating of IC = -15 A. With a transition frequency of 30 MHz and a power dissipation of 180 W, it is suitable for high-fidelity audio frequency amplifier output stages.
The Toshiba 2SA1987-O(Q) is a PNP bipolar junction transistor designed for power amplifier applications. It features a high breakdown voltage of VCEO = -230 V and a collector current rating of IC = -15 A. With a transition frequency of 30 MHz and a power dissipation of 180 W, it is suitable for high-fidelity audio frequency amplifier output stages.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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