2SA1987-O(Q)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
TRANS PNP 230V 15A TO3P
TRANS PNP 230V 15A TO3P
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 180 W Through Hole TO-3P(L)
Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 180 W Through Hole TO-3P(L)
Description
Description
The Toshiba 2SA1987-O(Q) is a PNP bipolar junction transistor designed for power amplifier applications. It features a high breakdown voltage of VCEO = -230 V and a collector current rating of IC = -15 A. With a transition frequency of 30 MHz and a power dissipation of 180 W, it is suitable for high-fidelity audio frequency amplifier output stages.
The Toshiba 2SA1987-O(Q) is a PNP bipolar junction transistor designed for power amplifier applications. It features a high breakdown voltage of VCEO = -230 V and a collector current rating of IC = -15 A. With a transition frequency of 30 MHz and a power dissipation of 180 W, it is suitable for high-fidelity audio frequency amplifier output stages.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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