2N5415
Tillverkare
ON SEMICONDUCTOR
Datablad
Datablad
Specifikation
Specifikation
TRANS PNP 200V 0.1A TO39
TRANS PNP 200V 0.1A TO39
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 200 V 100 mA 1 W Genomgående hål TO-39
Bipolär (BJT) Transistor PNP 200 V 100 mA 1 W Genomgående hål TO-39
Beskrivning (eng)
Beskrivning (eng)
The 2N5415 is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter voltage of 200V and a collector current rating of 100mA, making it suitable for various switching and amplification tasks. The device is housed in a TO-39 metal can package, ensuring robust performance in demanding environments. With a power dissipation capability of 1W, the 2N5415 is ideal for use in linear and switching applications, including audio amplifiers, signal processing, and power management circuits.
The 2N5415 is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter voltage of 200V and a collector current rating of 100mA, making it suitable for various switching and amplification tasks. The device is housed in a TO-39 metal can package, ensuring robust performance in demanding environments. With a power dissipation capability of 1W, the 2N5415 is ideal for use in linear and switching applications, including audio amplifiers, signal processing, and power management circuits.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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