2N5415
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 200V 0.1A TO39
TRANS PNP 200V 0.1A TO39
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 200 V 100 mA 1 W Through Hole TO-39
Bipolar (BJT) Transistor PNP 200 V 100 mA 1 W Through Hole TO-39
Description
Description
The 2N5415 is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter voltage of 200V and a collector current rating of 100mA, making it suitable for various switching and amplification tasks. The device is housed in a TO-39 metal can package, ensuring robust performance in demanding environments. With a power dissipation capability of 1W, the 2N5415 is ideal for use in linear and switching applications, including audio amplifiers, signal processing, and power management circuits.
The 2N5415 is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter voltage of 200V and a collector current rating of 100mA, making it suitable for various switching and amplification tasks. The device is housed in a TO-39 metal can package, ensuring robust performance in demanding environments. With a power dissipation capability of 1W, the 2N5415 is ideal for use in linear and switching applications, including audio amplifiers, signal processing, and power management circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
2N5415 is also available from the following manufacturersContact sales
Contact Marcus or one of our other skilled sales representatives. They'll help you find the right service option.C