2N5415
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
PNP TRANSISTORS
PNP TRANSISTORS
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 200 V 1 A 750 mW Through Hole TO-5AA
Bipolar (BJT) Transistor PNP 200 V 1 A 750 mW Through Hole TO-5AA
Description
Description
The 2N5415 is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter voltage of 200 V, a collector current rating of 1 A, and a power dissipation capability of 750 mW. Packaged in a TO-5AA through-hole configuration, this transistor is suitable for various amplification and switching applications. Its robust design ensures reliable performance in demanding environments, making it an ideal choice for engineers seeking dependable components for their electronic circuits.
The 2N5415 is a PNP bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter voltage of 200 V, a collector current rating of 1 A, and a power dissipation capability of 750 mW. Packaged in a TO-5AA through-hole configuration, this transistor is suitable for various amplification and switching applications. Its robust design ensures reliable performance in demanding environments, making it an ideal choice for engineers seeking dependable components for their electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
2N5415 is also available from the following manufacturersContact sales
Contact Petra or one of our other skilled sales representatives. They'll help you find the right service option.C