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QEB373ZR

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
QEB373ZR is designed for applications in industrial and consumer electronics, particularly in infrared communication, sensing, and remote control systems. Its high radiant intensity and narrow emission angle make it suitable for precise applications requiring effective light emission.
Specification
Specification
EMITTER IR 875NM 50MA SMD
EMITTER IR 875NM 50MA SMD
Detailed specification
Detailed specification
Infrared (IR) Emitter 875nm 1.7V 50mA 16mW/sr @ 100mA 24° 2-SMD, Z-Bend
Infrared (IR) Emitter 875nm 1.7V 50mA 16mW/sr @ 100mA 24° 2-SMD, Z-Bend
Description
Description
The QEB373ZR is a subminiature plastic infrared emitting diode with a peak emission wavelength of 875 nm. It operates at a forward current of 50 mA and features a narrow emission angle of 24°. The device is housed in a T-3/4 (2.50 x 2.00 mm) surface mount package, providing high radiant intensity and a clear lens for optimal performance.
The QEB373ZR is a subminiature plastic infrared emitting diode with a peak emission wavelength of 875 nm. It operates at a forward current of 50 mA and features a narrow emission angle of 24°. The device is housed in a T-3/4 (2.50 x 2.00 mm) surface mount package, providing high radiant intensity and a clear lens for optimal performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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