PBHV9115T-QVL
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
PBHV9115T-Q/SOT23/TO-236AB
PBHV9115T-Q/SOT23/TO-236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 150 V 1 A 115MHz 300 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor PNP 150 V 1 A 115MHz 300 mW surface-mounted TO-236AB
Description
Description
The PBHV9115T-Q is a PNP bipolar transistor designed for high-voltage applications, featuring a collector-emitter voltage of 150 V and a collector current of 1 A. It operates at a frequency of 115 MHz and has a low VCEsat of 300 mW. This surface-mounted device is suitable for automotive and industrial applications.
The PBHV9115T-Q is a PNP bipolar transistor designed for high-voltage applications, featuring a collector-emitter voltage of 150 V and a collector current of 1 A. It operates at a frequency of 115 MHz and has a low VCEsat of 300 mW. This surface-mounted device is suitable for automotive and industrial applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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