PBHV9115T-QVL
Tillverkare
NEXPERIA
Datablad
Datablad
Specifikation
Specifikation
PBHV9115T-Q/SOT23/TO-236AB
PBHV9115T-Q/SOT23/TO-236AB
Detaljerad specifikation
Detaljerad specifikation
Bipolär (BJT) Transistor PNP 150 V 1 A 115MHz 300 mW ytmonterad TO-236AB
Bipolär (BJT) Transistor PNP 150 V 1 A 115MHz 300 mW ytmonterad TO-236AB
Beskrivning (eng)
Beskrivning (eng)
The PBHV9115T-Q is a PNP bipolar transistor designed for high-voltage applications, featuring a collector-emitter voltage of 150 V and a collector current of 1 A. It operates at a frequency of 115 MHz and has a low VCEsat of 300 mW. This surface-mounted device is suitable for automotive and industrial applications.
The PBHV9115T-Q is a PNP bipolar transistor designed for high-voltage applications, featuring a collector-emitter voltage of 150 V and a collector current of 1 A. It operates at a frequency of 115 MHz and has a low VCEsat of 300 mW. This surface-mounted device is suitable for automotive and industrial applications.
Tillgänglighet
Tillgänglighet
Kan beställas hos Westcomp
Kan beställas hos Westcomp
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